Events
STATISTICAL CMOS VARIABILITY AND RELIABILITY
- Venue:
Hilton San Jose, 300 Almaden Blvd., San Jose, CA
- Date:
- Mon 13 Jun 2011 - Tue 14 Jun 2011
- Cost:
For Cost please refer to GSS Web pages
- Booking Details:
Online Registration is available at GSS web pages
GSS are proud to offer this ‘first-of-its-kind’ comprehensive course on statistical nano-CMOS variability
and reliability by the world-leading expert in this field, Professor Asen Asenov: CEO of Gold Standard
Simulations (GSS) Ltd. and leader of the Device Modelling Group at the University of Glasgow.
Download Flyer for detail of this course
BACKGROUND
Statistical variability, introduced by the discreteness of charge and matter, is a major concern for CMOS scaling and integration. It critically affects SRAM design, introduces timing issues in digital circuits, restricts supply voltage scaling and increases the power dissipation. On top of statistical variability, problems related to statistical aspects of reliability are looming that could reduce the life span of contemporary CMOS circuits and systems from tens of years to 1-2 years, or less, in the near future.
BENEFITS FOR YOUR ORGANISATION
This course provides the participants with the knowledge and tools to understand, control and
mitigate the issues related to statistical variability and reliability, and to design variability-resistant and reliable devices and circuits.The capabilities of your staff to control and tackle the statistical variability at device design level, and its impact on circuits and systems, defines the fine line between success and failure of your future products.
SYLLABUS
- Variability classification
- Sources of statistical variability
- Simulation of statistical variability
- Variability trends in conventional and novel MOSFETs
- Random telegraph noise statistics
- Statistical compact model strategies
- Statistical circuit simulation